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Designer's and SWITCHMODE are trademarks of Motorola, Inc.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data * Improved Efficiency Due to Low Base Drive Requirements: -- High and Flat DC Current Gain hFE -- Fast Switching * Motorola "6SIGMA" Philosophy Provides Tight and Reproductible Parametric Distributions * Specified Dynamic Saturation Data * Full Characterization at 125C The BUH50 has an application specific state-of-art die designed for use in 50 Watts HALOGEN electronic transformers and switchmode applications. This high voltage/high speed transistor exhibits the following main feature:
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
SWITCHMODE NPN Silicon Planar Power Transistor
Designer'sTM Data Sheet
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds
Thermal Resistance -- Junction to Case -- Junction to Ambient
Operating and Storage Temperature
*Total Device Dissipation @ TC = 25_C *Derate above 25C
Base Current -- Continuous Base Current -- Peak (1)
Collector Current -- Continuous -- Peak (1)
Emitter-Base Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Rating
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
VCES
RJC RJA
IC ICM
IB IBM
PD
TL
- 65 to 150
POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS
Value
2.5 62.5
260
800
800
500
50 0.4
2 4
4 8
9
BUH50
CASE 221A-06 TO-220AB
Order this document by BUH50/D
Watt W/_C
_C/W
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_C
_C
1
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BUH50
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
DYNAMIC SATURATION VOLTAGE DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS DC Current Gain (IC = 2 Adc, VCE = 5 Vdc) Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.33 Adc) (IC = 2 Adc, IB = 0.66 Adc) 25C (IC = 2 Adc, IB = 0.66 Adc) 100C Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Input Capacitance (VEB = 8 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.33 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 3 Adc, IB = 1 Adc) (IC = 2 Adc, IB = 0.66 Adc) Characteristic IC = 2 A IB1 = 0.66 A VCC = 300 V IC = 1 A IB1 = 0.33 A VCC = 300 V @ 3 s @ 1 s @ 3 s @ 1 s @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C VCEO(sus) VCE(dsat) VCE(sat) VBE(sat) Symbol ICEO IEBO ICES Cob hFE Cib fT Min 500 4 7 5 0.75 4 1.75 5 0.86 0.94 0.85 0.32 0.29 Typ 850 0.3 0.5 0.2 0.5 6 14 50 13 10 100 1000 1200 Max 100 100 100 0.5 1.2 1.6 1.5 0.6 0.7 1 Adc Adc Adc MHz Unit Vdc Vdc Vdc pF pF -- -- V V V V
2
Motorola Bipolar Power Transistor Device Data
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIII I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time IC = 1 Adc, IB1 = 0.3 Adc IB2 = 0.3 Adc VCC = 125 Vdc IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 125 Vdc IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 125 Vdc Characteristic IC = 2 Adc IB1 = 0.66 Adc IB2 = 1 Adc IC = 2 Adc IB1 = 0.4 Adc IB2 = 1 Adc @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C Symbol ton ton ton toff toff toff tc ts tc ts tf tf Min 0.95 Typ 90 100 190 220 150 180 100 110 1.7 2.5 1.2 1.7 2.9 2.5 80 95 95 2.75 Max 350 150 300 150 200 250 250 2.5 3.5 3.5 2
Motorola Bipolar Power Transistor Device Data
100
TYPICAL STATIC CHARACTERISTICS
VCE = 1 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10
1 0.01
TJ = - 40C
TJ = 25C
TJ = 125C
Figure 1. DC Current Gain @ 1 Volt
0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
100
10
1 0.01
TJ = 25C
TJ = - 40C
TJ = 125C
Figure 2. DC Current Gain @ 5 Volt
0.1 1 IC, COLLECTOR CURRENT (AMPS)
VCE = 5 V
BUH50
Unit
s
s
s
s
s
ns
ns
ns
ns
ns
ns
ns
3
10
BUH50
TYPICAL STATIC CHARACTERISTICS
10 TJ = 25C VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 IC/IB = 3
4A 3A 1 2A 1A IC = 500 mA 0.1 0.01 0.1 1 IB, BASE CURRENT (mA) 10
1 TJ = - 40C 0.1 TJ = 25C 0.01 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 TJ = 125C
Figure 3. Collector Saturation Region
Figure 4. Collector-Emitter Saturation Voltage
10 IC/IB = 5 VCE , VOLTAGE (VOLTS) TJ = - 40C VBE , VOLTAGE (VOLTS)
10 IC/IB = 3
1
1
TJ = 125C TJ = - 40C
0.1 TJ = 25C TJ = 125C 0.01 0.01
TJ = 25C
0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
0.1 0.01
0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Region
10 IC/IB = 5 VBE , VOLTAGE (VOLTS)
10000 TJ = 25C f(test) = 1 MHz
1
TJ = 125C TJ = - 40C TJ = 25C
C, CAPACITANCE (pF)
1000
Cib (pF)
100 Cob (pF) 10
0.1 0.01
0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100
Figure 7. Base-Emitter Saturation Region
Figure 8. Capacitance
4
Motorola Bipolar Power Transistor Device Data
BUH50
TYPICAL SWITCHING CHARACTERISTICS
3000 2500 2000 t, TIME (ns) IC/IB = 5 1500 1000 1000 500 IC/IB = 3 0 1 2 4 3 IC, COLLECTOR CURRENT (AMPS) 5 0 1 IC/IB = 5 2 3 4 IC, COLLECTOR CURRENT (AMPS) 5 t, TIME (ns) 2000 IC/IB = 3 TJ = 125C TJ = 25C IBoff = IC/2 VCC = 125 V PW = 20 s 4000 TJ = 125C TJ = 25C 3000 IBoff = IC/2 VCC = 125 V PW = 20 s
Figure 9. Resistive Switching, ton
Figure 10. Resistive Switch Time, toff
4000 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H t, TIME (ns)
300 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 200 tc
3000 t, TIME (ns)
IC/IB = 3
2000
100 1000 TJ = 125C TJ = 25C 0 1 tfi IC/IB = 5 4 0 1 3 2 IC, COLLECTOR CURRENT (AMPS) 4 TJ = 125C TJ = 25C
2 3 IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Storage Time, tsi
Figure 12. Inductive Storage Time, tc & tfi @ IC/IB = 3
TYPICAL CHARACTERISTICS
250 tc 200 TJ = 125C TJ = 25C t si , STORAGE TIME (s) 3000 IC = 1 A 2000 4000 TJ = 125C TJ = 25C IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H
t, TIME (ns)
150
100 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 1
1000 IC = 2 A 0
50
tfi 2 3 IC, COLLECTOR CURRENT (AMPS) 4 3
0
4
5
6 7 hFE, FORCED GAIN
8
9
10
Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5 Motorola Bipolar Power Transistor Device Data
Figure 14. Inductive Storage Time 5
BUH50
TYPICAL CHARACTERISTICS
150 140 130 t fi , FALL TIME (ns) 120 110 100 90 80 70 60 50 2 TJ = 125C TJ = 25C 4 6 hFE, FORCED GAIN IC = 2 A 50 8 10 3 5 7 hFE, FORCED GAIN 9 11 IC = 1 A IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 350 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H
t c , CROSSOVER TIME (ns)
250
IC = 1 A
150 TJ = 125C TJ = 25C
IC = 2 A
Figure 15. Inductive Fall Time
1
Figure 16. Inductive Crossover Time
POWER DERATING FACTOR
0.8
SECOND BREAKDOWN DERATING
0.6 THERMAL DERATING 0.4
0.2 0 20 40 80 120 100 60 TC, CASE TEMPERATURE (C) 140 160
Figure 17. Forward Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 20 is based on T C = 25C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 20 may be found at any case temperature by using the appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figure 22. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 21). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
6
Motorola Bipolar Power Transistor Device Data
BUH50
TYPICAL CHARACTERISTICS
VCE dyn 1 s dyn 3 s 0V 10 9 8 7 6 5 4 90% IB 1 s IB 3 s TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp tsi 10% Vclamp IC 90% IC tfi 10% IC tc
Figure 18. Dynamic Saturation Voltage
Figure 19. Inductive Switching Measurements
10 IC, COLLECTOR CURRENT (AMPS) 1 ms 5 ms 1 DC 0.1 10 s
1 s IC, COLLECTOR CURRENT (AMPS)
5 GAIN 3 4 TC 125C LC = 500 H
EXTENDED SOA
3
2
1 0V -1.5 V 0
-5 V
0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000
300
600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
900
Figure 20. Forward Bias Safe Operating Area
Figure 21. Reverse Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
7
BUH50
TYPICAL CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA IB2 Iout IB RB1 VCE IB1 IC PEAK
1 F -Voff
Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1
RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1
1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 t1 P(pk) RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)
0.01 0.01
0.1
1 t, TIME (ms)
10
100
1000
Figure 22. Typical Thermal Response (ZJC(t)) for BUH50
8
Motorola Bipolar Power Transistor Device Data
BUH50
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-06 TO-220AB ISSUE Y
Motorola Bipolar Power Transistor Device Data
9
BUH50
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10
Motorola Bipolar Power Transistor Device Data
*BUH50/D*
BUH50/D

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